Paraelectric lead lanthanum titanate (PLT) thin films have been prepared by a reactive de magnetron sputtering system using a multicomponent metal target. The surface area control of each element on the target markedly facilitates the fabrication of thin films of complex ceramic compounds. A postdeposition heat-treatment was applied to all as-deposited PLT thin films at annealing temperatures up to 750 degrees C for crystallization. The composition of the PLT (28) thin film annealed at 650 degrees C was : Pb, 0.73; La, 0.28; Ti, 0.88; O, 2.9. The dielectric constant and dissipation factor of the thin film (200 nm) at low field measurements (500 V cm(-1)) are 1216 and 0.018, respectively. The charge storage density using a typical Sawyer-Tower circuit with a 500 Hz sine wave was 12.5 mu C cm(-2) at the electric field of 200 kV cm(-1).