Thin silicon dioxide films are commonly used as insulating layers in metal-insulator structures, such as integrated circuits and multichip modules. These films are either thermally grown or deposited by thermal or plasma-enhanced chemical vapor deposition (PECVD). The advantage of PECVD is that lower deposition temperatures can be used avoiding defect formation, diffusion, and degradation of the metal layer However, the low deposition temperature of the PECVD process has a negative effect on the quality of the silicon dioxide. Oxides produced at low temperatures contain more silanol and water impurities and are more porous than those deposited at higher temperatures. The; deposition parameters, including substrate temperature, RF power, pressure, and reactant gas flow rate, aff ect the silanol and water concentration. The substrate temperature has the largest effect on the silanol concentration of the oxide. Using a large RF power, high pressure, and low nitrous oxide to silane ratio will minimize the silanol concentration at a given temperature. This minimize:the dielectric constant and maximize the etch resistance-of the bride produced.