In recent years, rapid thermal annealing (RTA) has been widely studied in order to replace conventional processing. The use of this technique, which consumes less time and energy than classical thermal treatments, can be expanded if the origin of process-induced defects can be clarified. The aim of this work is to determine the nature and the electrical properties of the defects induced by RTA treatments in virgin silicon and to study their interactions with dopant and residual impurities (oxygen, carbon, metals). Our results show that these defects are mostly related fo residual impurities present in the as-grown silicon wafers.