Indium-tin-oxide thin films were deposited by atomic layer epitaxy at 500C degrees using InCl3, SnCl4, and water as precursors. The films were characterized by means of x-ray diffraction, scanning electron microscopy, energy dispersive x-ray analysis, polarography, and by optical and electrical measurements. The films had polycrystalline In2O3 structure. In addition, the SnO2 phase was detected in films containing the highest tin contents. High transparencies and resistivities in the order of 2.4 x 10(-4) Omega cm could be achieved by optimizing the tin doping procedure. Postannealing decreased the resistivity about 5%.