High purity chemical vapor deposition (CVD) silicon carbide fabricated by a commercial process was examined and oxidized at 1100 degrees C along with high purity single crystal silicon carbide. The freestanding CVD thick films had a highly textured polycrystalline microstructure, with the <111> directions of the crystals parallel to the growth direction. This texturing maintained the polarity of the (4) over bar 3m crystal structure, implying that either the [111] or the [(111) over bar] direction grew significantly faster during the CVD process. The ((111) over bar) face of the cubic, CVD-SiC oxidized at the same rate as the (000 (1) over bar) face of the single crystal SiC. The (111) face of the CVD-SiC oxidized at nominally the same rate as the (0001) face of the single crystal SiC.