A careful re-examination of experimental results on in situ boron-doping during silicon epitaxy which have been previously published(16) permits us to discuss how boron adsorption rate, desorption, and incorporation rate are dependent on silicon growth rate. It is shown for the first time that boron incorporation covers the whole range from equilibrium-limited to kinetically controlled incorporation when certain deposition conditions are met. In the transition region boron incorporation is affected by the reduction of boron adsorption not only due to the consumption of adsorbed boron species by the doping process but also by the increasing hindrance of boron adsorption due to the increase in the film growth rate. At other deposition conditions the known adsorption-desorption model of silicon doping describes boron incorporation completely.