An ion shower doping technique has been applied to control the surface concentration of boron or phosphorus on a silicon wafer both for p-well and n-well complementary metal oxide semiconductor (CMOS) wafer processes. The dose is controllable in the range from 10(12) to 10(15) cm(-2) and has a proportional relation with the doping time. Both surface impurity concentrations of boron and phosphorus within the range from 10(16) to 10(20) cm(-3) can be obtained, the range required for CMOS wafer processing. Fabricated MOS transistors have shown the characteristics comparable to those obtained from devices fabricated with ion implanters which are conventionally used in the semiconductor industry. As a result, it has been ascertained that ion shower doping can be utilized in the CMOS wafer process.