Thermally stable tungsten Schottky contacts to low doped GH-silicon carbide (SiC) were fabricated via chemical vapor deposition at 670 K followed by a reactive ion etch to pattern the contacts. Physical characterization by x-ray diffraction, x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry and transmission electron microscopy verified a distinct W/6H-SiC interface after a 2 h vacuum anneal at 1073 K. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed at temperatures ranging from 295 to 773 K and revealed a low n-type Schottky barrier phi(Bn)(235) = 0.79 eV, ideal for low ohmic applications and a high p-type Schottky barrier phi(Bp)(773) = 1.89 eV. At 473 K a current rectification ratio of 10(7) at +/- 10 V was observed for the p-type contact.