Dry etched InAlN surfaces have been characterized by atomic force microscopy, current-voltage measurements, and Auger electron spectroscopy. Electron cyclotron resonance discharges of BCl3, BCl3/Ar, or BCl3/N-2 all produce nitrogen deficient surfaces that promote leakage current in rectifying metal contacts, with the BCl3/N-2 producing the least disruption of the InAlN surface properties.