화학공학소재연구정보센터
Solar Energy, Vol.197, 154-162, 2020
Effect of Al3+ doping concentration and film thickness of ZnO nanoparticles over the TiO2 photoelectrode in CdS quantum dots sensitized solar cells
In this work was systematically studied the Al3+ doped ZnO nanoparticles effect on the performance of CdS quantum dot sensitized Titania solar cells. Varying the spin coating speed, ZnO nanoparticles with different Al3+ conentrations (00, 0.1. 0.2, 0.4 M %) were deposited over TiO2/CdS. The introduction of undoped ZnO nanoparticles results in a small increase of the V-oc (from 524 to 547 mV), impedance analysis indicate that this increase is due to a recombination process reduction. On the other side, low Al3+ doped ZnO increase at the same time the short circuit current (from 7.15 to 8.46 mA/cm(2)) and the open circuit voltage (from 524 to 576 mV) resulting a 39% of relative enhancement of photoconversion efficiency (from 1.9 to 2.65%). Light absorption and External Quantum Efficiency (QE) measurements indicate that small concentrations of Al3+ promote the formation of new energy levels where extractible charge carriers are photogenerated resulting in an increase in the J(sc) meanwhile, impedance analysis show that Al3+ as a dopant in ZnO reduce the recombination process and at the same time increase the transport process, resulting in the observed increase of V-oc and contributing to the increase of J(sc).