화학공학소재연구정보센터
Journal of the Electrochemical Society, Vol.143, No.10, 3257-3266, 1996
Reaction of 1,1,1,5,5,5-Hexafluoro-2,4-Pentanedione (H(+)Hfac) with Iron and Iron-Oxide Thin-Films
The application of chelation chemistry to the etching or removal of iron and iron oxide is investigated. Reactions of iron and iron oxide with 1,1,1,5,5,5-hexafluoro-2,4-pentanedione (H(+)hfac), 1,1,1-trifluoro acetic acid (H(+)tfaa), and trimethylsilyl-1,1,1,5,5,5-hexafluoro-2, (SEE(+)hfac) provide insight into the mechanisms responsible for H(+)hfac etching and removal of iron and iron oxide. Substitutional nucleophilic exchange reactions are only partially responsible for the removal of Fe. In addition, H(+)hfac decomposition at the gamma carbon results in the formation of volatile Fe-III complexes of trifluoroacetates (tfa) and hexafluoropentandionates (hfac). Although decomposition of H(+)hfac occurs at iron surfaces, it appears to have little effect on etching or cleaning process.