We have demonstrated low energy electron-enhanced etching (LE4) of 1.0 mu m thick films of GaN on (100) Si substrates with good anisotropy. The etch rate increased from 70 to 525 Angstrom/min as the sample temperature increased from 50 to 250 degrees C. Auger spectra indicated that surface stoichiometry was essentially unchanged during LE4 at process temperatures below 100 degrees C; samples etched at higher temperatures showed excess gallium at the surface.