A new procedure for dopant depth profiling by anodic sectioning is presented. It consists of using anodic oxidation in aqueous 0.1 M HCl solution at constant potential and offers several advantages over the previously used procedures for accomplishing the anodic sectioning. Constant voltage oxidation is insensitive to the sample size, and is highly uniform and very rapid. Removing the electrolyte from the sample is easy. The amount of Si removed per cycle can be determined accurately and is much less than in the traditional technique, indicating that the new procedure is more suitable for ultrashallow implants.