Thin film ZnTe was prepared in two steps : (i) spray pyrolysis to form ZnO; followed by (ii) reaction between Te vapor and ZnO to form ZnTe. Large increases in thickness were observed when ZnO was converted to ZnTe. The films could be either p- or n-type depending on the Zn and Te content in the films. Dopants, which included B, Al, Ga, In, P, As, and Sb, were introduced during the spray pyrolysis stage. The undoped ZnTe had a resistivity of the order of 10(6) Omega cm. When Sb, B, and P were incorporated into the films, the p-ZnTe resistivity was decreased by three to six orders of magnitude. The lower resistivity value obtained for these films was 4.1 Omega cm for Sb, 9.7 Omega cm for B, 123 Omega cm for P. Hole densities were as high as 10(18) cm(-3) when ZnTe was doped with Sb. Mobilities were generally around 1 cm(2) V-1 s(-1). The incorporation of Ga, Al, and As had inconsistent effects on the resistivity and on carrier type.