The effect of HNMe(2) on the chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium and NH3 was examined. The growth rates were enhanced almost sevenfold with the addition of HNMe(2). However, HNMe(2) did not have a significant effect on the resistivity, composition, or conformality of the films under the conditions studied. The most likely explanation for the higher growth rates is suppression of reactor wall loss reactions and enhancement of precursor transport to the substrate.