A new, nondestructive anodic bonding test has been designed. One main factor involved in the anodic bonding process is the level of electrostatic pressure applied. We have designed, fabricated, and tested new test structures to control the electrostatic pressure. The information on the level of electrostatic pressure during the anodic banding process tells us about the quality of the bond. With this test it is possible to characterize the anodic bonding method and the quality of the processed bonded wafers.