"Continuous" low gate insulator field (1 MV/cm) electron injection in insulated gate field effect transistors using a pulsed injection technique (PIT) was conducted in the dose range 10(13) to 10(17) e/cm(2) over the range of current densities A/cm(2). PIT enables independent control of insulator fields and injection current densities, while not causing optically induced shallow trap depopulation. As is generally the case, the threshold voltage shift, Delta V-D Varies monotonically with dose, and can be modeled using a defect generation power law requiring fewer adjustable parameters than is necessary using a first order trapping moael. It was also found that for a given dose the injection current density has a profound effect on the observed magnitude of trap generation. Previously, the total dose and insulator field were thought to be the only determining factors in trap generation. Based on these results, it appears that when the intrinsic defect concentration(s) is to be determined, a very low current density (injection rate) should be used to minimize trap generation effects which would confuse the issue. It is reported also for the first time that the expected in-use lifetime df the devices, calculated from the injection data, also exhibits a power law dependency on the injection current density. These results raise serious questions about the validity of aggressive injection techniques (such as avalanche injection arid Fowler-Nordheim approaches), of the existence of ultrasmall cross section electron traps based on such methods, and of aggressive accelerated aging conclusions, based on the extrapolation of high injection current density data to end-of-life threshold voltage shifts.