Developing low-cost, highly efficient and robust photocatalystic hydrogen evolution system is a promising solution to environmental and energy crisis. Herein, a Z-scheme Cu3P/ZnIn2S4 heterojunction photocatalyst was successfully constructed for the first time via a facile solution-phase hybridization method. The optimized Cu3P/ZIS composite exhibited the highest H-2 production rate of 2561.1 mu mol g(-1) h(-1) under visible light irradiation (>420 nm), which was 5.2 times greater than that of bare ZnIn(2)S(4 )and even exceeded the photocatalytic performance of Pt/ZIS composite. The apparent quantum yield of 10 wt% Cu3P/ZnIn2S4 can reach 22.3% at 420 nm. The huge boost of photocatalytic hydrogen evolution activity is ascribed to the formation of heterojunction with the built in electric field within Cu3P/ZnIn2S4 and Z-scheme charge carriers transfer pathway, which result in efficient separation and migration of charge carriers. In addition, both experimental and theoretical calculation confirmed that the charge-carriers transfer pathway of Cu3P/ZnIn2S4 photocatalyst follows the Z-scheme mechanism instead of conventional type-II heterojunction mechanism. This work is considered helpful for getting a great deal of insight into constructing high-activity and cost-effective transition metal phosphides (TMPs) based photcatalytic hydrogen production system and rationally designing Z-scheme heterojunction photocatalyst. (C) 2020 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.