The oxidation enhanced diffusion (OED) of boron and diffusion as well as recombination of interstitials on silicon-on, insulator (SOI) material have been studied in periodically boron-doped silicon. Bonded wafers (BESOI UNIBOND) as well as oxygen-implanted wafers (SIMOX) have been used to consider different interfacial morphologies. Diffusion experiments were performed in the temperature range of 800 to 1050 degrees C and compared with SUPREM-IV simulation results. Parameters like recombination velocity and diffusivity of interstitials have been extracted. Results show for the first time that OED is effectively reduced in SOI material in the near Si/SiO2-interface region as well as in the surface region.