Thin layers of diarylethene oligomers (oligo(DAE)) were deposited by electrochemical reduction of a diazonium salt on glassy carbon and gold electrodes. The layers were fully characterized using electrochemistry, XPS, and AFM, and switching between open and closed forms using light was evidenced. Solid-state molecular junctions (MJs), in which a C-AFM tip is used as the top contact, were fabricated with total layer thicknesses fixed at 2-3 nm and 8-9 nm, i.e. below and above the direct tunneling limit. DAE was then photoswitched between its open and closed forms. Oligo(DAE) MJs using the open form of DAE are highly resistive while those with DAE in the closed form are more conductive. ON/OFF ratios of 2-3 and 200-400 were obtained for 3-nm- and 9-nm-thick DAE MJs, respectively.