- Previous Article
- Next Article
- Table of Contents
Journal of the Electrochemical Society, Vol.145, No.1, L4-L8, 1998
Fabrication of Ag/Y2O3-stabilized ZrO2 composite films by metallorganic chemical vapor deposition
Composite films of Ag and Y2O3-stabilized ZrO2 have been prepared by simultaneous metallorganic chemical vapor deposition (MOCVD) of the metal and ceramic. Aerosol-assisted precursor delivery of a toluene solution of the precursors Zr(tfac)(4), Y(hfac)(3), and (hfac)Ag(C4H8OS)(2) was used to deposit films with Ag volume fractions ranging from 0.007 to 0.60 (hfac = hexafluoroacetylacetonate, tfac = trifluoroacetylacetonate). Film morphology and room-temperature resistivity varied with Ag content. Resistivities for Ag volume fractions above 0.30 were consistent with typical granular composite films; however, at Ag volume fractions below 0.10, much lower resistivities were found than are typically reported. The percolation behavior of the films is analyzed and possible explanations for the resistivity results are discussed.
Keywords:YTTRIA-STABILIZED ZIRCONIA;MEMBRANE REACTORS;DEFECT STRUCTURE;OXYGEN-ION;CONDUCTIVITY;TERBIA;TRANSPORT