Fullerene-based, submicrometer scale, linear structures have been deposited by means of scanning electrochemical microscopy. The results produced line patterns with widths ranging from 200 nm to 3 mu m and lengths in excess of 100 mu m. The lines were obtained as a result of a raster scan of the tunneling tip. The synthesis method involved reduction of C-60 in acetonitrile followed by electro-oxidation of the prereduced fulleride ions on silicon substrates. The bulk electroreduction step was carried out ex situ prior to use of a scanning tunneling microscope coupled with an electrochemical cell. Dimensional measurements were obtained via scanning electron microscope. The main goal of this work is to develop a patterning or templating process that would involve steps such as : (a) electro-oxidative deposition of C-60 templates or patterns; (b) deposition of additional layers of metal or semiconductor; (c) solvent removal of C-60 patterns; and (d) possible further deposition.