Porous 3C-SiC prepared with conventional electrochemical anodization has been characterized using various techniques, such as Fourier transform infrared spectroscopy, extended X-ray absorption fine structure, and X-ray absorption near edge structure. Intense photoluminescence with energies above the bandgap of bulk 3C-SiC has been observed. This is consistent with the fact that the size of the minimum feature for this material is less than 10 nm, which is small enough to cause the quantum confinement effect. Changes in the electronic structure of the conduction band and shortened Si-C bond length have been clearly observed.