The incorporation of cadmium sulfide into porous silicon is investigated with the aim of realizing electrical contacts with the inner surface of the porous material. This is achieved by using a sequential chemical bath deposition method, consisting of the deposition of a few monolayers of cadmium hydroxide in a first solution, and conversion into cadmium sulfide in a second solution containing thioacetamide. This sequence is repeated five times until the pores are completely full. The chemical deposition process is assessed by a detailed analysis of the solution chemistry. Characterizations of the deposit by scanning electron microscopy, X-ray fluorescence, Auger electron spectroscopy, Rutherford back scattering, and X-ray photoelectron spectroscopy are presented and-confirm good pore penetration by CdS, with only a weak concentration gradient from the top to the bottom of the porous layer.