Diffusion barrier properties of very thin sputtered Ta and reactively sputtered TaN films used as a barrier layer between Cu and Si substrates were investigated using electrical measurement and materials analysis. The Cu/Ta/p(+)-n junction diodes with the Ta barrier of 5, 10, and 25 nm thicknesses were able to sustain a 30 min thermal annealing at temperatures up to 450, 500, and 550 degrees C, respectively, without causing degradation to the device＇s electrical characteristics. The barrier capability of Ta layer can be effectively improved by incorporation of nitrogen in the Ta film using reactive sputtering technique. For the Cu/TaN/p(+)-n junction diodes with the TaN barrier of 5,10, and 25 nm thicknesses, thermal stability was able to reach 500, 600, and 700 degrees C, respectively. We found that failure of the very thin Ta and TaN barriers was not related to Ta silicidation at the barrier/Si interface. Failure of the barrier layer is presumably due to Cu diffusion through the barrier layer during the process of thermal annealing via local defects, such as grain boundaries and stress-induced weak points.