Recently tin disulfide (SnS2) has attracted considerable attention due to its n-type semiconductor property with a tunable bandgap similar to CdS and In2S3, Tin disulfide (SnS2) and doped vanadium (V) powder were successfully prepared by a simple hydrothermal method. The crystallographic, morphological, elemental conformation and optical properties were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), energy dispersion microscopy (EDS), Atomic force microscopy (AFM), UV-Vis spectroscopy and electrochemical analysis, respectively. The XRD analysis revealed the polycrystalline nature of the films. Raman spectroscopy indicated a prominent peak at similar to 315 cm(-1) along with two small peaks after the incorporation of V contents. The AFM analysis showed the big grain and the rough surface of the films. The optical absorption indicates a remarkable shift to the lower wavelength and optical bandgap was found to vary from 2.42 to 2.02 eV with V-doped contents. The photocurrents response of the V-doped SnS2 films was conducted by three-electrode configuration which demonstrating good photoresponse, three times higher than pure SnS2 photoanode. The results reveal that the V-doping with SnS2 is a very promising compound for effectively photovoltaic application.