The growth characteristics of silicon oxide film deposited by atmospheric pressure chemical vapor deposition using tetraethylorthosilicate and ozone were studied focusing on substrate dependence. We found that Si-OH and Si-O-C2H5 bonds on substrates act as tetraethylorthosilicate adsorption sites, and adsorption site density drastically affects film growth characteristics. Films show a rough surface and flowlike step coverage on substrates with low-density adsorption sites. On substrates with high-density adsorption sites, however; films show a smooth surface and conformal step coverage. Tetraethylorthosilicate adsorption sites on the substrate surface must be controlled to obtain the desired film growth characteristics.