TiN thin films were grown by atomic layer epitaxy using titanium tetraiodide (TiI4) and ammonia (NH3) as precursors. The films were characterized with Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, energy dispersive X-ray spectroscopy, X-ray diffraction : scanning electron microscopy, and resistivity measurements. Both the growth rate and Trim quality were markedly dependent on the growth temperature. As the temperature was increased from 400 to 500 degrees C the growth rate increased from 0.12 to 0.30 Angstrom/cycle, and the resistivity decreased from 380 to 70 mu Ohm cm. Also, the oxygen content decreased with increasing temperature being about 10 atom % in the films grown at 475 to 500 degrees C. The iodine contents were below 0.5 atom %.