화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Journal of Industrial and Engineering Chemistry, Vol.94, 145-158, February, 2021
DOI10.1016/j.jiec.2020.10.029  Export Citation
Kinetic and gas-phase study of the chemical vapor deposition of silicon carbide from C2H3SiCl3/H2
A. Desenfant, G. Laduye1, G.L. Vignoles, and G. Chollon†
  • Laboratoire des Composites Thermostructuraux, CNRS, Safran, CEA, University of Bordeaux, 3, Allée La Boétie, 33600 Pessac, France
  • 1Innovation Campus Paris, Air Liquide, 781350 Les Loges en Josas, France
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The chemical vapor deposition (CVD) of silicon carbide from vinyltrichlorosilane (VTS) was studied to identify a range of conditions leading to pure crystalline SiC. The deposition rate was recorded to evidence the various deposition regimes. Gas phase, elemental analyses and infiltration tests were also performed. Three distinct chemical reaction regimes were identified. In CVD conditions, carbon is co-deposited at low temperature while VTS is only partially decomposed. In infiltration conditions, the composition switches to pure SiC inside the porous substrate because of a depletion of reactive hydrocarbon species. Competing heterogeneous reactions are responsible for a hysteresis versus temperature, in both deposition rate and composition of the deposit. The high temperature domain is the most suitable to deposit pure crystalline SiC in CVD conditions. Hydrogen dilution strongly accelerates the homogeneous decomposition of VTS as compared to argon. Assumptions on the reaction mechanism were proposed describing the chemistry of this precursor.
Keywords:Chemical vapor deposition;Vinyltrichlorosilane;Silicon carbide;Deposition kinetics;FTIR spectroscopy;Gas phase analysis
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