Ti 쇼트키 배리어 다이오드의 Al 확산 방지를 위한 SC-1 세정 효과

최진석; 최여진; 안성진; Jinseok Choi; Yeo Jin Choi; Sung Jin An

Korean Journal of Materials Research, Vol.31, No.2, 97-100, February, 2021

DOI10.3740/MRSK.2021.31.2.97 Export Citation

Ti 쇼트키 배리어 다이오드의 Al 확산 방지를 위한 SC-1 세정 효과

Effect of SC-1 Cleaning to Prevent Al Diffusion for Ti Schottky Barrier Diode

최진석, 최여진, 안성진 ^†

금오공과대학교 신소재공학과

Jinseok Choi, Yeo Jin Choi, and Sung Jin An^†

Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology, 61 Daehak-ro, Gumi-si, Gyeongsangbuk-do, 39177, Republic of Korea

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We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD.

Keywords:Schottky barrier diode;Al diffusion;SC-1;Ti silicide

[References]

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Sze SM, Ng KK, Physics of Semiconductor Devices, 3th ed., p. 134, Wiley, Newyork, USA, (2007).
Perrone D, Naretto M, Ferrero S, Scaltrito L, Pirri CF, Mater. Sci. Forum, 615-617, 647 (2009)
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Bosscher WD, Meirhaeghe RLV, Laere AD, Laflere WH, Cardon F, Solid State Electron., 31, 945 (1988).
Kim JS, Choi HH, Son SH, Choi SY, Appl. Phys. Lett., 79, 860 (2001)
Wu WF, Tsai KC, Chao CG, Chen JC, Ou KL, J. Electron. Mater., 34, 1150 (2005)
Park JY, Kim JY, Kim YD, Jeon H, Kim Y, J. Korean Phys. Soc., 42, 817 (2003)
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Kern W, J. Electrochem. Soc., 137, 1887 (1990)
Jongste JF, Loopstra OB, Janssen GCAM, Radelaar S, J. Appl. Phys., 73, 2816 (1993)

[Related Articles]

[1] Schottky W, Naturwissenschaften, 26, 843 (1938)

[2] Sze SM, Ng KK, Physics of Semiconductor Devices, 3th ed., p. 134, Wiley, Newyork, USA, (2007).

[3] Perrone D, Naretto M, Ferrero S, Scaltrito L, Pirri CF, Mater. Sci. Forum, 615-617, 647 (2009)

[4] Bosscher WD, Meirhaeghe RLV, Hanselaer PL, Caenepeel L, Laflere WH, Cardon F, Semicond. Sci. Technol., 1, 376 (1986)

[5] Bosscher WD, Meirhaeghe RLV, Laere AD, Laflere WH, Cardon F, Solid State Electron., 31, 945 (1988).

[6] Kim JS, Choi HH, Son SH, Choi SY, Appl. Phys. Lett., 79, 860 (2001)

[7] Wu WF, Tsai KC, Chao CG, Chen JC, Ou KL, J. Electron. Mater., 34, 1150 (2005)

[8] Park JY, Kim JY, Kim YD, Jeon H, Kim Y, J. Korean Phys. Soc., 42, 817 (2003)

[9] Ting CY, Wittmer M, J. Appl. Phys., 54, 937 (1983)

[10] Kern W, J. Electrochem. Soc., 137, 1887 (1990)

[11] Jongste JF, Loopstra OB, Janssen GCAM, Radelaar S, J. Appl. Phys., 73, 2816 (1993)