Titanium nitride layers on silicon substrates have been deposited by magnetron sputtering at a constant temperature of 200-degrees-C using nitrogen partial pressures (p(N2)) from 0.001 to 0.36 Pa. Distinct dependences between p(N2) in the reactive gas and the mechanical and structural properties of the layers could be found by x-ray diffraction and other methods. The general absence of the Ti2N phase in layers deposited at low temperatures can be explained by the high energy impact of energetic particles during the deposition process as well as by the limited mobility of adatoms due to the low substrate temperature. Two different cases of lattice distortions were detected for low and high p(N2), respectively. In the higher pressure range the lattice parameters a0(111) are greater than the a0(200). For this the variable density of interstitial sites in different planes together with the macroscopic film stress was found to be responsible. At lower p(N2) the a0(111) was smaller than the a0(200). ThiS effect could be explained by the presence of a high number of vacancies in the lattice influencing the chemical bonding and thus leading to an anisotropy of the stability of the interplanar spacings. From that macroscopic stresses results in an anisotropic deformation of the film crystallites. Both explanations could be supported by annealing experiments.