Thin Ti films are deposited by collimation sputtering. Resistivity is around 80 muOMEGA cm in the as-deposited collimation film. This value does not decrease with the increase of sputtering power and of deposition rate, and is higher than that of 60-65 muOMEGA cm in film by conventional sputtering. Strongly (002) oriented Ti film is deposited in conventional sputtering. However, weak (002) and (101) peaks appear in films by collimation sputtering. X-ray intensity ratio, I(002)/[I(002)+I(101)], indicating the grain growth of preferential Ti(002), does not increase to 0.93 attained in the conventional sputtering with increasing power.