Copper zinc tin sulfide solar cells were fabricated by using spray pyrolysis from a window layer to an absorber layer. ZnS and In2S3 buffer layers were deposited on the TiO2 layer, and the photovoltaic characteristics were investigated. The ZnS buffer demonstrated a poor photovoltaic performance because of its poor surface coverage and micro-cracks at fluorine-doped tin oxide/TiO2 layers. The In2S3 buffer layer sprayed at low temperature (<360 degrees C) showed a large difference between photo and dark currents beyond the open-circuit voltage (V-OC). When the spraying temperature exceeded 390 degrees C, the devices showed high dark leakage currents at reverse biases because of the high conductivity of the buffer layer, resulting in decreased V-OC and short-circuit current density (J(SC)). The optimum temperature for spraying In2S3 is 360 degrees C, and the best performing device showed 410 mV, 30.4 mA/cm(2), 35.3%, and 4.4% of V-OC, J(SC), fill factor, and efficiency, respectively.