Scanning tunneling microscopy (STM) and tunneling spectroscopic I-V measurements of n-type GaAs(111)B (2 x 2) surfaces are reported. The samples grown by molecular beam epitaxy and the As-capping technique were employed to allow transfer into the ultrahigh vacuum scanning tunneling microscopy (UHV-STM) system. Filled and empty state images exhibit a hexagonal array of bright maxima spaced 8 angstrom apart consistent with the unit cell dimensions. The images show a variety of domain boundaries resulting from surface stacking faults. The domain boundaries are oriented along [101BAR], [011BAR], and [110BAR] directions. Numerous defects are observed at the point where these domain boundaries intersect. Atomic models for these defects are shown. Scanning tunneling spectroscopic data indicate that the Fermi level on this surface is pinned midgap.