Free-Electron Laser Spectroscopy of Semiconductors and Interfaces

Mckinley JT; Albridge RG; Barnes AV; Chen GC; Davidson JL; Languell ML; Polavarapu PL; Smith JF; Yang X; Ueda A; Tolk N; Coluzza C; Baudat PA; Dupuy C; Gozzo F; Iilegems M; Martin D; Moriergenoud F; Rudra A; Tuncel E; Margaritondo G

Journal of Vacuum Science & Technology A, Vol.12, No.4, 2323-2326, 1994

Mckinley JT, Albridge RG, Barnes AV, Chen GC, Davidson JL, Languell ML, Polavarapu PL, Smith JF, Yang X, Ueda A, Tolk N, Coluzza C, Baudat PA, Dupuy C, Gozzo F, Iilegems M, Martin D, Moriergenoud F, Rudra A, Tuncel E, Margaritondo G

The broad tunability (1-10 mum) and megawatt regime peak intensity available from the Vanderbilt Free-Electron Laser is opening new avenues in semiconductor research. Initial experiments in nonlinear optical absorption and heterojunction band-edge discontinuity measurements are discussed in order to illustrate the flexibility of the free-electron laser as a research tool.

Keywords:ENERGY-BAND DISCONTINUITIES;INTERNAL PHOTOEMISSION;2-PHOTON ABSORPTION;HETEROJUNCTION;HETEROSTRUCTURES