Time-resolved infrared emission has been observed by means of a Fourier transform technique from plasmas of fluorinated hydrocarbons under conditions similar to those used in semiconductor surface processing. Emission has been detected from vibrationally excited precursors and reaction products, and examples are shown of emission from HE CF4, CO2, and CF2O. The time dependences of the signals on plasma extinction give information on the production and relaxation mechanisms taking place. Equilibrated rotational and translational temperatures in the plasma are derived from quantum state distributions in HE Blackbody emission is observed from both chamber surfaces and from a Si wafer placed in the plasma, and the time-resolved emission technique is used to measure the surface temperature under conditions in which strong molecular emissions are present.