A high degree of 111 preferred orientation with minimal mosaic spread has been shown by many researchers to be essential for electromigration resistance in Al-based interconnects. We have found that ill texture can be greatly enhanced through the use of low-energy self-ion irradiation during deposition. In these experiments, 300-nm-thick Al layers were grown on SiO2 at 65 degrees C from highly ionized beams provided by an ultrahigh-vacuum primary-ion deposition (PID) source. Al+ ion energies E(Al+) and ion/neutral ratios J(Al+)/J(Al) were independently varied from 10 to 120 eV and from 0% to 68%, respectively. All PID Al films exhibited very strong 111 preferred orientations, which increased with increasing E(Al+) and/or J(Al+)/J(Al), and azimuthally symmetric x-ray diffraction pole figures with no measurable tilt. The full width at half-maximum intensity Delta omega of 111 omega-rocking curves decreased continuously from 9.6 degrees with E(Al+) = 10 eV and J(Al+)/J(Al) = 68% to 2.2 degrees with J(Al+)/J(Al) = 120 eV compared to 10.6 degrees for films deposited by thermal evaporation. This was accompanied by a continuous decrease in the average grain size from 370 nm for thermal deposition to 90 nm with E(Al+) = 120 eV. The PID Al firms exhibited a columnar microstructure with weak competitive column growth. Changing the beam energy after the formation of a continuous layer had only a minor effect on film texture, indicating that the degree of ion-irradiation-induced preferred orientation is controlled during nucleation and/or coalescence while local pseudomorphic forces dominate thereafter omega-rocking curves from a bilayer film consisting of a 20-nm-thick Al buffer layer grown by PID followed by a 280-nm-thick thermally evaporated Al overlayer were essentially identical to those obtained from 300-nm-thick single-layer PLD Al films.