Silicon carbide nanowire (SiC NW), as a typical wide band gap semiconductor was used as light-emitting materials and devices in high-temperature and harsh environments due to its excellent properties. In this paper, flexible ultra-long SiC NWs membrane was successfully synthesized by electrospinning and subsequently high-temperature sintering using phenolic resin and silica sol as precursors. Results of system characterization reveal that SiC NWs possess a smooth and uniform surface with diameter distribution mainly between 50-300 nm and a length of more than tens of micrometers, forming a network structure. The growth mechanism of synthesized nanowires was mainly carbothermal reduction in situ and was accompanied by vapor-solid (V-S) reaction. The present work provides a simple and cost-effective way for controllable fabrication of SiC NWs membrane. The photoluminescence spectrum of SiC NWs membrane emerged a clear blue shift, indicating a potential application in optoelectronic devices and discussed the potential applications of SiC NWs membrane in other fields.