Low loading is one of the bottlenecks limiting the performance of quantum dot sensitized solar cells (QDSCs). Although previous QD secondary deposition relying on electrostatic interaction can improve QD loading, due to the introduction of new recombination centers, it is not capable of enhancing the photovoltage and fill factor. Herein, without the introduction of new recombination centers, a convenient QD secondary deposition approach is developed by creating new adsorption sites via the formation of a metal oxyhydroxide layer around QD presensitized photoanodes. MgCl2 solution treated Zn-Cu-In-S-Se (ZCISSe) QD sensitized TiO2 film electrodes have been chosen as a model device to investigate this secondary deposition approach. The experimental results demonstrate that additional 38% of the QDs are immobilized on the photoanode as a single layer. Due to the increased QD loading and concomitant enhanced light-harvesting capacity and reduced charge recombination, not only photocurrent but also photovoltage and fill factor have been remarkably enhanced. The average PCE of resulted ZCISSe QDSCs is boosted to 15.31% (J(sc) = 26.52 mA cm(-2), V-oc = 0.802 V, FF = 0.720), from the original 13.54% (J(sc) = 24.23 mA cm(-2), V-oc = 0.789 V, FF = 0.708). Furthermore, a new certified PCE record of 15.20% has been obtained for liquid-junction QDSCs.