A 70 MHz inductively coupled rf bridge probe is used to measure the minority carrier lifetime of the Si and SiGe epilayers grown by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition (UHV-ECRCVD) at temperatures below 560 degrees C. Proper surface treatments before HF immersion are required for the accurate measurement of the bulk minority carrier lifetime. The effects of the process parameters such as the substrate de bias, the distance of the ECR layer from the substrate, and the substrate temperature, including in situ surface cleaning, on the minority carrier lifetime of the Si and SiGe epilayers are examined by the rf bridge probe. It is confirmed that the rf bridge probe can monitor the epitaxial quality of low temperature Si and SiGe epilayers, making it an indispensable tool for the high quality device fabrication with Si and SiGe epitaxial layers grown by low temperature UHV-ECRCVD.