Commercial chemical vapor deposition (CVD) equipment is generally designed around either a single-wafer architecture or a multiwafer architecture. Single-wafer systems are touted as giving more control over the deposition process (and thus higher quality films), while multistation systems have higher throughput. In this article, computational fluid dynamics modeling of both configurations is used to better understand their strengths and limitations for the case of CVD TiN films. It is found that the multistation design does result in substantial changes to the flow field at each deposition station in comparison to the single-wafer reactor. However, these flow changes have minimal effect on the actual film deposition profile. This is because the deposition characteristics depend primarily on the z component of velocity, which is not altered. Additionally, the crosstalk between adjacent stations is found to be negligible for gas flows typical of CVD processes.