Highly transparent and conductive In2O3-ZnO films have been prepared by rf magnetron sputtering using targets composed of In2O3 and ZnO. Polycrystalline Zn2In2O5 films were deposited at a substrate temperature of 350 degrees C using targets with a Zn content [Zn/(Zn+In)] of about 10-60 at. %. A uniform spatial resistivity distribution on the substrate surface was obtained even in Zn2In2O5 films deposited at room temperature. A resistivity of 3.4x10(-4) Ohm cm was obtained in Sn-doped Zn2In2O5 films deposited at 350 degrees C. A sheet resistance of 400 Ohm/sq and an average transmittance above 90% in the visible range were obtained for an undoped Zn2In2O5 him with a thickness of about 20 nm. The etching rate of In2O3-ZnO films when using HCl as the etchant could be controlled by the Zn content in the films.