화학공학소재연구정보센터
Journal of Vacuum Science & Technology A, Vol.14, No.4, 2163-2168, 1996
Characterization of Helicon Wave Plasma Designed for Direct-Current Sputtering
The rf plasma produced in a helicon wave frequency range was studied using helical antennas and its application to de sputtering at low Ar pressures was reported. A dense plasma of the order of 10(12)-10(13) cm(-3) could be obtained at a pressure around 0.1 Pa by using the antennas with azimuthal mode number of m=+/-1 or m=0. The measurement of the axial magnetic component B-z of the rf held in the plasma showed evidence of the excitation of helicon wave. A sputtering apparatus has been developed by means of the helicon wave plasma excited with a m=0 mode two-turn antenna. It was found that the characteristics of the rf plasma enhanced sputtering discharge were dominated by the properties of the rf plasma sustained at pressures as low as 3x10(-2) Pa. A target current as high as 2 A at a pressure of 0.4 Pa was achieved, and sputtering of the Al target indicated that a deposition rate of 1 mu m/min could be obtained under this condition.