We have investigated the properties of InGaZn(6)O(9)thin films fabricated by radio frequency (RF) magnetron sputtering for the application to the electrodes in transparent thin film transistor (TTFT). The InGaZn(6)O(9)thin films have been prepared with varying working pressure and RF power. It has been found that the InGaZn(6)O(9)films have an amorphous structure and show a very smooth and featureless surface regardless of the deposition conditions. At optimized deposition condition, the InGaZn(6)O(9)film shows an average transmittance of about 83.54% in the visible region and the sheet resistance of about 91.6 omega/sq. The top gate InGaZnO4TTFT device embedded with InGaZn(6)O(9)electrode operates in enhanced mode with a threshold voltage of 1.1 V, a mobility of 3.48 cm(2)/Vs, an on-off ratio of > 10(4), and a sub-threshold slope of 0.9 V/decade. In addition, the optical transmittance of the TTFT device is observed about 85% at 550 nm wavelength.