Epitaxial growth of TiSe2 films on Se-terminated GaAs(111)B substrates were carried out at different growth temperature by molecular beam epitaxy. Grown films have been investigated by reflection high energy electron diffraction, Auger electron spectroscopy, and measurements of resistivity parallel to the surface. TiSe2 epitaxial films have been obtained at various temperatures, but the optimum growth temperature was determined to be 400 degrees C. A charge density wave transition has been observed in the resistivity of the film grown at 400 degrees C, indicating that it has a good quality comparable to a bulk single crystal.