NH3 is an important component of many chemical vapor deposition (CVD) processes for TiN films, which are used for diffusion barriers and other applications in microelectronic circuits. In this study? the interaction of NH(3)( )with TiN surfaces is examined with temperature programmed desorption (TPD) and Auger electron spectroscopy. NH3 has two adsorption states on TiN : a chemisorbed state and a multilayer state. A new method for analyzing TPD spectra in systems with slow pumping speeds yields activation energies for desorption for the two states of 24 kcal/mol and 7.3 kcal/mol, respectively. The sticking probability into the chemisorption state is similar to 0.06. These results are discussed in the context of TiN CVD. In addition, the high temperature stability of TiN is investigated. TIN decomposes to its elements only after heating to 1300 K, showing that decomposition is unlikely to occur under CVD conditions.