New mounting methods for a silicon crystal and a thermocouple are described. The sample mounted using this design exhibited a very uniform temperature distribution when resistively heated. Deviations between the silicon temperature and the mounted thermocouple temperature have been measured. Metal contamination on the surface of the sample mounted with a thermocouple by the new method was found to be below the detection limit of Auger electron spectroscopy. In addition, the emissivity data at 0.65 mu m for silicon as a function of temperature has been fitted to a useful equation.