Ion and electron flow characteristics have been studied in different regimes both in rf (13.56 MHz) and VHF (58 MHz) glow discharges in silane. The measurements were conducted in a growth reactor and the data obtained was used for SiHx films deposition. Electronic properties of the films prepared under a variety of ion bombardment in rf, VHF discharges have been investigated. Correlation of these properties with ion parameters in rf, VHF discharges is discussed.