An attempt to perform a three-dimensional (3D) quantitative evaluation of the complete sample volume sputter removed in a secondary-ion mass spectrometry analysis is described. Using a focused (similar to 3 mu m) 7 keV Cs+ primary-ion beam and detecting sputtered MCs+ ions (M stands for any sample element), a vertical Si-metal-oxide-semiconductor transistor structure (with a lateral size of similar to 40 mu m and a total vertical dimension of similar to 3 mu m) was analyzed by image depth profiling. Elemental concentrations of these micrographs were derived from relative sensitivity factors and the pertinent depth information in the 3D sample (data) volume could be estimated by utilizing these factors and an approximation of the atomic densities. The specimen’s surface topography both in the pristine state and upon completion of the sputter depth profile was recorded by two-dimensional stylus profilometry. By these means, a reconstruction of the sample volume eroded during the analysis appears feasible at a lateral resolution of a few mu m and an in-depth resolution of about 10 nm.