Highly transparent and conductive ZnO-In2O3 films have been prepared by atmospheric pressure chemical vapor deposition using Zn(C5H7O2)(2), In(C5H7O2)(3), and H2O as Zn, In, and O source materials, respectively. The obtained minimum resistivity of polycrystalline In2O3 or ZnO films deposited on glass substrates at a temperature of 350 degrees C using In(C5H7O2)(3) Or Zn(C5H7O2)(2) and H2O, respectively, was 10(-2)-10(-1) Omega cm. The resistivity of ZnO-In2O3 films deposited at 350 degrees C was strongly dependent on the chemical composition (Zn content) of the films. A resistivity of 4x10(-4) Omega cm and an average transmittance above 85% in the visible range were obtained in an amorphous ZnO-In2O3 film with a Zn content (Zn/(In+Zn) atomic ratio) of 0.25.